A Hacker News user questions whether anti-AI sentiment in the U.S. workforce is coordinated disinformation, noting that predicted mass unemployment hasn't materialized and AI appears to create productivity gains. They argue that criticism of AI data centers is disproportionate compared to pollution from fashion and travel industries.
Researchers at Xidian University demonstrated wurtzite ferroelectric memory based on aluminum scandium nitride (AlScN) exceeding 10 billion write cycles while maintaining electrical polarization. The breakthrough uses an AlScN/AlN superlattice structure to confine nitrogen vacancies and prevent defect migration that causes device degradation. The result represents a laboratory advance toward practical nonvolatile memory, though production viability remains uncertain.